cystech electronics corp. spec. no. : c827d3 issued date : 2012.04.09 revised date : page no. : 1/7 BTN13003D3 cystek product specification general purpose npn epitaxial planar transistor BTN13003D3 features ? high breakdown voltage, v ceo =450v (min.) ? high collector current, i c(max) =1.5a (dc) ? pb-free package symbol outline absolute maximum ratings (ta=25 c) parameter symbol limits unit collector-base voltage v cbo 700 v collector-emitter voltage v ceo 450 v emitter-base voltage v ebo 9 v collector current(dc) i c 1.5 a collector current(pulsed) i cp 3 (note ) a base current i b 0.2 a power dissipation(t a =25 ) 1.5 w power dissipation(t c =25 ) pd 20 w junction temperature tj 150 c storage temperature tstg -55~+150 c note : single pulse, pw 300 s, duty cycle 2% . to-126ml BTN13003D3 b base c collector e emitter e c b
cystech electronics corp. spec. no. : c827d3 issued date : 2012.04.09 revised date : page no. : 2/7 BTN13003D3 cystek product specification characteristics (ta=25c) symbol min. typ. max. unit test conditions bv cbo 700 - - v i c =100 a bv ceo 450 - - v i c =10ma bv ebo 9 - - v i e =100 a i cbo - - 1 a v cb =700v, i e =0 i ceo - - 50 a v ce =400v, i e =0 i ebo - - 100 na v eb =9v, i c =0 *v ce(sat) - 136 300 mv i c =500ma, i b =100ma *v ce(sat) - 256 600 mv i c =1a, i b =250ma *v ce(sat) - 400 800 v i c =1.5a, i b =500ma *v be(sat) - 0.84 1 v i c =500ma, i b =100ma *v be(sat) - 0.92 1.2 v i c =1a, i b =250ma *h fe 1 18 - 36 - v ce =2v, i c =500ma *h fe 2 5 - 21 - v ce =2v, i c =1a f t 5 - - mhz v ce =10v, i c =100ma, f=100mhz t stg - - 0.5 t f 1.8 - 6.6 s v cc =100v, i c =1a, i b 1=-i b 2=0.2a, i c =0.25a *pulse test: pulse width 380 s, duty cycle 2% ordering information device package shipping marking mje13003d3 to-126ml (pb-free) 200 pcs / bag, 15 bags/box, 10 boxes/carton 13003
cystech electronics corp. spec. no. : c827d3 issued date : 2012.04.09 revised date : page no. : 3/7 BTN13003D3 cystek product specification typical characteristics emitter grounded output characteristics 0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.1 0123456 collector-to-emitter voltage---vce(v) collector current---ic(a) 200ua 300ua 400ua 500ua 1ma ib=100ua emitter grounded output characteristics 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0123456 collector-to-emitter voltage---vce(v) collector current---ic(a) ib=5ma 10ma 15ma 20ma 35 m a current gain vs collector current 1 10 100 1000 1 10 100 1000 10000 collector current---ic(ma) current gain---hfe vce=1v 125 75 25 current gain vs collector current 1 10 100 1000 1 10 100 1000 10000 collector current---ic(ma) current gain---hfe vce=2v 125 75 25 current gain vs collector current 1 10 100 1000 10 100 1000 10000 collector current---ic(ma) current gain---hfe 25 75 125 vce=5v saturation voltage vs collector current 10 100 1000 1 10 100 1000 10000 collector current---ic(ma) saturation voltage---(mv) vcesat@ic=3ib 125 75 25
cystech electronics corp. spec. no. : c827d3 issued date : 2012.04.09 revised date : page no. : 4/7 BTN13003D3 cystek product specification typical characteristics(cont.) saturation voltage vs collector current 10 100 1000 10000 1 10 100 1000 10000 collector current---ic(ma) saturation voltage---(mv) vcesat@ic=4ib 125 75 25 saturation voltage vs collector current 10 100 1000 10000 1 10 100 1000 10000 collector current---ic(ma) saturation voltage---(mv) vcesat@ic=5ib 125 75 25 saturation voltage vs collector current 100 1000 10000 1 10 100 1000 10000 collector current---ic(ma) saturation voltage---(mv) vbesat@ic=3ib 25 75 125 saturation voltage vs collector current 100 1000 10000 1 10 100 1000 10000 collector current---ic(ma) saturation voltage---(mv) vbesat@ic=5ib 25 75 125 on voltage vs collector current 100 1000 10000 1 10 100 1000 10000 collector current---ic(ma) on voltage---(mv) vc e = 2v 25 75 125 capacitance vs reverse-biased voltage 1 10 100 1000 0.1 1 10 100 reverse-biased voltage---vr(v) capacitance---(pf) cib cob
cystech electronics corp. spec. no. : c827d3 issued date : 2012.04.09 revised date : page no. : 5/7 BTN13003D3 cystek product specification typical characteristics(cont.) power derating curve 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 0 50 100 150 200 ambient temperature---ta() power dissipation---pd(w) power derating curve 0 5 10 15 20 25 0 50 100 150 200 case temperature---tc() power dissipation---pd(w)
cystech electronics corp. spec. no. : c827d3 issued date : 2012.04.09 revised date : page no. : 6/7 BTN13003D3 cystek product specification recommended wave soldering condition product peak temperature soldering time pb-free devices 260 +0/-5 c 5 +1/-1 seconds recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds time maintained above: ? temperature (t l ) ? time (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak temperature(tp) 10-30 seconds 20-40 seconds ramp down rate 6 c/second max. 6c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of the package, measured on the package body surface.
cystech electronics corp. spec. no. : c827d3 issued date : 2012.04.09 revised date : page no. : 7/7 BTN13003D3 cystek product specification to-126ml dimension *: typical inches millimeters inches millimeters marking: dim min. max. min. max. dim min. max. min. max. a 0.118 0.134 3.000 3.400 e *0.090 *2.28 a1 0.071 0.087 1.800 2.200 e1 0.176 0.183 4.460 4.660 b 0.026 0.034 0.660 0.860 l 0.594 0.610 15.100 15.500 b1 0.046 0.054 1.170 1.370 l1 0.051 0.059 1.300 1.500 c 0.018 0.024 0.450 0.600 p 0.159 0.167 4.040 4.240 d 0.307 0.323 7.800 8.200 1 0.118 0.126 3.000 3.200 e 0.425 0.441 10.800 11.200 2 0.122 0.130 3.100 3.300 notes: 1.controlling dimension: millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing spec ification or packing method, please cont act your local cystek sales office. material: ? lead: pure tin plated. ? mold compound: epoxy resin family, flammability solid burning class: ul94v-0. important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitab le for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance . style: pin 1.emitter 2.collector 3.base 3-lead to-126ml plastic package cystek packa g e code: d3 13003 device name date code
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